Micron Technology DRAM SDRAMMobile-, Part #: MT40A2G4SA-062E:J TR | Dynamic random access memory | DEX REN Low input bias current: 2

Low input bias current: 2 nA maximum

Peripherals: DMA

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Micron Technology DRAM SDRAMMobile-, Part #: MT40A2G4SA-062E:J TR | Dynamic random access memory | DEX REN Low input bias current: 2Micron Technology DRAM SDRAM DDR4, Part #: MT40A2G4SA 062E: J TR features: VDD = VDDQ = 1. 2V 60mV VPP = 2. 5V, 125mV, +250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O Refresh time of 8192 cycle at TC temperature range: 64ms at 40C to 85C 32ms at >85C to 95C 16ms at >95C to 105C 16 internal banks (x4, x8): 4 groups of 4 banks each 8 internal banks (x16): 2 groups of 4 banks each 8n bit prefetch architecture