Micron Technology DRAM SDRAM-DDR3, Part #: MT41K128M16JT-125 AAT:K | Dynamic random access memory | DEX GE WETB Xiilnx FPGA Part #XC7A12T-3CPG238E

Xiilnx FPGA Part #XC7A12T-3CPG238E

RAM content is retained

Features: • Direct Sensor Input • High Output Torque • Low Pointer Flutter • High Input Impedance • Overvoltage Protection • Return to Zero • Internally Fused Leads in PDIP−16 and SO−20W Packages • These Devices are Pb−Free

Analog Devices Operational Amplifier Part #LTC6373HDFM#PBF

Micron Technology DRAM SDRAM-DDR3, Part #: MT41K128M16JT-125 AAT:K | Dynamic random access memory | DEX GE WETB Xiilnx FPGA Part #XC7A12T-3CPG238EMicron Technology DRAM SDRAM DDR3L, Part #: MT41K128M16JT 125 AAT: K features: VDD = VDDQ = 1. 35V (1. 2831. 45V) Backward compatible to VDD = VDDQ = 1. 5V 0. 075V Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT) for data, strobe, and mask signals Programmable CAS (READ) latency (CL) Programmable posted CAS additive latency (AL)