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Low energy consumption
It doesn't suffer from the insertion loss
5mm Male Connectors are simple to use
6W Capacitance 550pF AC Vrms 300V DC Voltage 385V Mounting Type Through Hole
5N120BND Power MOSFET Cell holder Low energy consumptionIGBT designs that do not require a punch through are the HGTG5N120BND and HGTP5N120BND. They are brand new IGBTs that are MOS gated for high voltage switching. IGBTs combine the greatest elements of bipolar transistors and MOSFETs. This device combines the low on state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. The IGBT in use is a TA49308 development type. The TA49058 development type diode is utilized (Part
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